NGI uses twist to engineer 2D semiconductors with built-in memory functions

A team of researchers at The University of Manchester's National Graphene Institute (NGI) and the National Physical Laboratory (NPL) has demonstrated that slightly twisted 2D transition metal dichalcogenides (TMDs) display room-temperature ferroelectricity. This characteristic, combined with TMDs' outstanding optical properties, can be used to build multi-functional optoelectronic devices such as transistors and LEDs with built-in…
view related posts