Ferrari, A. C. et al. Science and know-how roadmap for graphene, associated two-dimensional crystals, and hybrid techniques. Nanoscale 7, 4598–4810 (2015).
Liu, J. et al. Semimetals for high-performance photodetection. Nat. Mater. 19, 830–837 (2020).
Chaves, A. et al. Bandgap engineering of two-dimensional semiconductor supplies. npj 2D Mater. Appl. 4, 29 (2020).
Illarionov, Y. Y. et al. Insulators for 2D nanoelectronics: the hole to bridge. Nat. Commun. 11, 3385 (2020).
Koppens, F. H. L. et al. Photodetectors based mostly on graphene, different two-dimensional supplies and hybrid techniques. Nat. Nanotechnol. 9, 780–793 (2014).
Lengthy, M. S. et al. Progress, challenges, and alternatives for 2D materials based mostly photodetectors. Adv. Funct. Mater. 29, 1803807 (2019).
Chen, X. Q. et al. Graphene hybrid buildings for built-in and versatile optoelectronics. Adv. Mater. 32, 1902039 (2019).
Vicarelli, L. et al. Graphene field-effect transistors as room-temperature terahertz detectors. Nat. Mater. 11, 865–871 (2012).
Akinwande, D. et al. Graphene and two-dimensional supplies for silicon know-how. Nature 573, 507–518 (2019).
Li, J. et al. Hybrid silicon photonic units with two-dimensional supplies. Nanophotonics 9, 2295–2314 (2020).
Cao, G. Q. et al. Multicolor broadband and quick photodetector based mostly on InGaAs–Insulator–graphene hybrid heterostructure. Adv. Electron. Mater. 6, 1901007 (2020).
Deng, S. Ok. et al. Pressure engineering in two-dimensional nanomaterials past graphene. Nano At this time 22, 14–35 (2018).
Lukman, S. et al. Excessive oscillator power interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection. Nat. Nanotechnol. 15, 675–682 (2020).
Rahim, A. et al. Open-access silicon photonics: present standing and rising initiatives. Proc. IEEE 106, 2313–2330 (2018).
Bogaerts, W. & Chrostowski, L. Silicon photonics circuit design: strategies, instruments and challenges. Laser Photonics Rev. 12, 1700237 (2018).
Soref, R. Group IV photonics: enabling 2 µm communications. Nat. Photonics 9, 358–359 (2015).
Solar, J. et al. Giant-scale nanophotonic phased array. Nature 493, 195–199 (2013).
Lavchiev, V. M. & Jakoby, B. Photonics within the mid-infrared: challenges in single-chip integration and absorption sensing. IEEE J. Sel. Prime. Quantum Electron. 23, 8200612 (2017).
Shen, Y. C. et al. Deep studying with coherent nanophotonic circuits. Nat. Photonics 11, 441–446 (2017).
Wang, J. W. et al. Built-in photonic quantum applied sciences. Nat. Photonics 14, 273–284 (2020).
Rieke, G. H. Detection of Gentle: From the Ultraviolet to the Submillimeter. 2nd edn. (Cambridge College Press, Cambridge, 2003).
Huang, Z. H. et al. Microstructured silicon photodetector. Appl. Phys. Lett. 89, 033506 (2006).
Chen, H. T. et al. 100-Gbps RZ information reception in 67-GHz Si-contacted germanium waveguide p-i-n photodetectors. J. Lightwave Technol. 35, 722–726 (2017).
Roelkens, G. et al. III-V-on-silicon photonic units for optical communication and sensing. Photonics 2, 969–1004 (2015).
Capper, P. & Garland, J. W. Mercury Cadmium Telluride: Development, Properties and Functions. (Wiley, Hoboken, 2011).
Thomson, D. et al. Roadmap on silicon photonics. J. Decide. 18, 073003 (2016).
Liu, Y. et al. Two-dimensional transistors past graphene and TMDCs. Chem. Soc. Rev. 47, 6388–6409 (2018).
Xiong, Z. & Tang, J. Y. Two-dimensional supplies and hybrid techniques for photodetection. in Synthesis, Modeling, and Characterization of 2D Supplies, and Their Heterostructures. (eds. Yang, E. H. et al.) 325–349 (Elsevier, 2020).
Chen, X. L. et al. Broadly tunable black phosphorus mid-infrared photodetector. Nat. Commun. 8, 1672 (2017).
Bonaccorso, F. et al. Graphene photonics and optoelectronics. Nat. Photonics 4, 611–622 (2010).
Mak, Ok. F. & Shan, J. Photonics and optoelectronics of 2D semiconductor transition metallic dichalcogenides. Nat. Photonics 10, 216–226 (2016).
Dong, B. W. et al. Black phosphorus based mostly photodetectors. in Fundamentals and Functions of Phosphorus Nanomaterials. (ed. Ji, H. F.) Ch. 3 (American Chemical Society, 2019).
Amani, M. et al. Answer-synthesized high-mobility tellurium nanoflakes for short-wave infrared photodetectors. ACS Nano 12, 7253–7263 (2018).
Yu, T. T. et al. Two‐dimensional GeP‐based mostly broad‐band optical switches and photodetectors. Adv. Optical Mater. 8, 1901490 (2020).
Wang, Y. et al. Excessive-speed infrared two-dimensional platinum diselenide photodetectors. Appl. Phys. Lett. 116, 211101 (2020).
Buscema, M. et al. Photocurrent era with two-dimensional van der Waals semiconductors. Chem. Soc. Rev. 44, 3691–3718 (2015).
Sze, S. M. Physics of Semiconductor Units. (John Wiley and Sons, New York, 1981).
Di Bartolomeo, A. Graphene Schottky diodes: an experimental evaluate of the rectifying graphene/semiconductor heterojunction. Phys. Rep. 606, 1–58 (2016).
Scales, C. & Berini, P. Skinny-film Schottky barrier photodetector fashions. IEEE J. Quantum Electron. 46, 633–643 (2010).
Miao, J. S. & Wang, C. Avalanche photodetectors based mostly on two-dimensional layered supplies. Nano Res. https://doi.org/10.1007/s12274-020-3001-8 (2020).
Ma, Q. et al. Tuning ultrafast electron thermalization pathways in a van der Waals heterostructure. Nat. Phys. 12, 455–459 (2016).
Vu, Q. A. et al. Tuning service tunneling in van der waals heterostructures for ultrahigh detectivity. Nano Lett. 17, 453–459 (2017).
Furchi, M. M. et al. Mechanisms of photoconductivity in atomically skinny MoS2. Nano Lett. 14, 6165–6170 (2014).
Zhu, W. J. et al. Digital transport and machine prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 5, 3087 (2014).
Guo, X. T. et al. Excessive-performance graphene photodetector utilizing interfacial gating. Optica 3, 1066–1070 (2016).
Liu, Y. et al. Extremely environment friendly and air-stable infrared photodetector based mostly on 2D layered graphene-black phosphorus heterostructure. ACS Appl. Mater. Interfaces 9, 36137–36145 (2017).
Malic, E. et al. Provider dynamics in graphene: ultrafast many‐particle phenomena. Ann. der Phys. 529, 1700038 (2017).
Ma, Q. et al. Competing channels for hot-electron cooling in graphene. Phys. Rev. Lett. 112, 247401 (2014).
Low, T. et al. Origin of photoresponse in black phosphorus phototransistors. Phys. Rev. B 90, 081408 (2014).
Du, X. et al. Graphene-based bolometers. Graphene 2D Mater. 1, 1–22 (2014).
Yan, J. et al. Twin-gated bilayer graphene hot-electron bolometer. Nat. Nanotechnol. 7, 472–478 (2012).
Jago, R., Malic, E. & Wendler, F. Microscopic origin of the bolometric impact in graphene. Phys. Rev. B 99, 035419 (2019).
Efetov, D. Ok. et al. Quick thermal leisure in cavity-coupled graphene bolometers with a Johnson noise read-out. Nat. Nanotechnol. 13, 797–801 (2018).
Blaikie, A., Miller, D. & Alemán, B. J. A quick and delicate room-temperature graphene nanomechanical bolometer. Nat. Commun. 10, 4726 (2019).
Walsh, E. D. et al. Graphene-based Josephson-junction single-photon detector. Phys. Rev. Appl. 8, 024022 (2017).
Vora, H. et al. Bolometric response in graphene based mostly superconducting tunnel junctions. Appl. Phys. Lett. 100, 153507 (2012).
Gabor, N. M. et al. Scorching service–assisted intrinsic photoresponse in graphene. Science 334, 648–652 (2011).
Guo, J. S. et al. Excessive-performance silicon-graphene hybrid plasmonic waveguide photodetectors past 1.55 μm. Gentle.: Sci. Appl. 9, 29 (2020).
Xia, F. N. et al. Ultrafast graphene photodetector. Nat. Nanotechnol. 4, 839–843 (2009).
Shiue, R. J. et al. Excessive-responsivity graphene–boron nitride photodetector and autocorrelator in a silicon photonic built-in circuit. Nano Lett. 15, 7288–7293 (2015).
Tielrooij, Ok. J. et al. Technology of photovoltage in graphene on a femtosecond timescale by environment friendly service heating. Nat. Nanotechnol. 10, 437–443 (2015).
Tielrooij, Ok. J. et al. Scorching-carrier photocurrent results at graphene-metal interfaces. J. Phys. 27, 164207 (2015).
Freitag, M. et al. Photoconductivity of biased graphene. Nat. Photonics 7, 53–59 (2013).
Bie, Y. Q. et al. A MoTe2-based light-emitting diode and photodetector for silicon photonic built-in circuits. Nat. Nanotechnol. 12, 1124–1129 (2017).
Buscema, M. et al. Photovoltaic impact in few-layer black phosphorus PN junctions outlined by native electrostatic gating. Nat. Commun. 5, 4651 (2014).
Lopez-Sanchez, O. et al. Ultrasensitive photodetectors based mostly on monolayer MoS2. Nat. Nanotechnol. 8, 497–501 (2013).
Guo, Q. S. et al. Black phosphorus mid-infrared photodetectors with excessive acquire. Nano Lett. 16, 4648–4655 (2016).
Huang, L. et al. Waveguide-integrated black phosphorus photodetector for mid-infrared functions. ACS Nano 13, 913–921 (2019).
Ma, Y. M. et al. Excessive-responsivity mid-infrared black phosphorus gradual gentle waveguide photodetector. Adv. Optical Mater. 8, 2000337 (2020).
Maiti, R. et al. Pressure-engineered high-responsivity MoTe2 photodetector for silicon photonic built-in circuits. Nat. Photonics 14, 578–584 (2020).
Youngblood, N. et al. Waveguide-integrated black phosphorus photodetector with excessive responsivity and low darkish present. Nat. Photonics 9, 247–252 (2015).
Yin, Y. L. et al. Excessive-speed and high-responsivity hybrid silicon/black-phosphorus waveguide photodetectors at 2 μm. Laser Photonics Rev. 13, 1900032 (2019).
Hong, T. et al. Polarized photocurrent response in black phosphorus field-effect transistors. Nanoscale 6, 8978–8983 (2014).
Konstantatos, G. et al. Hybrid graphene–quantum dot phototransistors with ultrahigh acquire. Nat. Nanotechnol. 7, 363–368 (2012).
Ni, Z. Y. et al. Plasmonic silicon quantum dots enabled high-sensitivity ultrabroadband photodetection of graphene-based hybrid phototransistors. ACS Nano 11, 9854–9862 (2017).
Liu, Y. D. et al. Planar carbon nanotube–graphene hybrid movies for high-performance broadband photodetectors. Nat. Commun. 6, 8589 (2015).
Shin, G. H. et al. Ultrasensitive phototransistor based mostly on WSe2–MoS2 van der Waals heterojunction. Nano Lett. 20, 5741–5748 (2020).
Chen, Z. F. et al. Synergistic results of plasmonics and electron trapping in graphene short-wave infrared photodetectors with ultrahigh responsivity. ACS Nano 11, 430–437 (2017).
Liu, J. J. et al. Silicon-graphene conductive photodetector with ultra-high responsivity. Sci. Rep. 7, 40904 (2017).
Venuthurumilli, P. Ok., Ye, P. D. & Xu, X. F. Plasmonic resonance enhanced polarization-sensitive photodetection by black phosphorus in close to infrared. ACS Nano 12, 4861–4867 (2018).
Wang, X. D. et al. Ultrasensitive and broadband MoS2 photodetector pushed by ferroelectrics. Adv. Mater. 27, 6575–6581 (2015).
Yu, W. J. et al. Extremely environment friendly gate-tunable photocurrent era in vertical heterostructures of layered supplies. Nat. Nanotechnol. 8, 952–958 (2013).
Britnell, L. et al. Sturdy light-matter interactions in heterostructures of atomically skinny movies. Science 340, 1311–1314 (2013).
Massicotte, M. et al. Picosecond photoresponse in van der Waals heterostructures. Nat. Nanotechnol. 11, 42–46 (2016).
Heo, J. et al. Reconfigurable van der Waals heterostructured units with metallic–insulator transition. Nano Lett. 16, 6746–6754 (2016).
Lengthy, M. S. et al. Broadband photovoltaic detectors based mostly on an atomically skinny heterostructure. Nano Lett. 16, 2254–2259 (2016).
Lee, C. H. et al. Atomically skinny p–n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9, 676–681 (2014).
Yang, S. et al. Monolithic interface contact engineering to spice up optoelectronic performances of 2D semiconductor photovoltaic heterojunctions. Nano Lett. 20, 2443–2451 (2020).
Ma, P. et al. Quick MoTe2 waveguide photodetector with excessive sensitivity at telecommunication wavelengths. ACS Photonics 5, 1846–1852 (2018).
Flöry, N. et al. Waveguide-integrated van der Waals heterostructure photodetector at telecom wavelengths with excessive pace and excessive responsivity. Nat. Nanotechnol. 15, 118–124 (2020).
Lee, J. et al. Modulation of junction modes in SnSe2/MoTe2 broken-gap van der Waals heterostructure for multifunctional units. Nano Lett. 20, 2370–2377 (2020).
Ye, L. et al. Close to-infrared photodetector based mostly on MoS2/black phosphorus heterojunction. ACS Photonics 3, 692–699 (2016).
Li, H., Ye, L. & Xu, J. B. Excessive-performance broadband floating-base bipolar phototransistor based mostly on WSe2/BP/MoS2 heterostructure. ACS Photonics 4, 823–829 (2017).
Bullock, J. et al. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with excessive detectivity at room temperature. Nat. Photonics 12, 601–607 (2018).
Yan, W. et al. Spectrally selective mid-wave infrared detection utilizing fabry-pérot cavity enhanced black phosphorus 2D photodiodes. ACS Nano 14, 13645–13651 (2020).
Yu, W. J. et al. Unusually environment friendly photocurrent extraction in monolayer van der Waals heterostructure by tunnelling by discretized obstacles. Nat. Commun. 7, 13278 (2016).
Gao, A. Y. et al. Commentary of ballistic avalanche phenomena in nanoscale vertical InSe/BP heterostructures. Nat. Nanotechnol. 14, 217–222 (2019).
Wang, X. M. et al. Excessive-responsivity graphene/silicon-heterostructure waveguide photodetectors. Nat. Photonics 7, 888–891 (2013).
Goykhman, I. et al. On-chip built-in, silicon–graphene plasmonic schottky photodetector with excessive responsivity and avalanche photogain. Nano Lett. 16, 3005–3013 (2016).
Massicotte, M. et al. Picture-thermionic impact in vertical graphene heterostructures. Nat. Commun. 7, 12174 (2016).
Li, L. F. et al. Plasmon excited ultrahot carriers and damaging differential photoresponse in a vertical graphene van der Waals heterostructure. Nano Lett. 19, 3295–3304 (2019).
Jeong, H. et al. Steel–insulator–semiconductor diode consisting of two-dimensional nanomaterials. Nano Lett. 16, 1858–1862 (2016).
De Fazio, D. et al. Graphene-quantum dots hybrid photodetectors with low dark-current readout. ACS Nano 14, 11897–11905 (2020).
Koester, S. J. & Li, M. Waveguide-coupled graphene optoelectronics. IEEE J. Sel. Prime. Quantum Electron. 20, 6000211 (2014).
Romagnoli, M. et al. Graphene-based built-in photonics for next-generation datacom and telecom. Nat. Rev. Mater. 3, 392–414 (2018).
Ma, Z. Z. et al. Compact graphene plasmonic slot photodetector on silicon-on-insulator with excessive responsivity. ACS Photonics 7, 932–940 (2020).
Pospischil, A. et al. CMOS-compatible graphene photodetector masking all optical communication bands. Nat. Photonics 7, 892–896 (2013).
Ding, Y. H. et al. Extremely-compact built-in graphene plasmonic photodetector with bandwidth above 110 GHz. Nanophotonics 9, 317–325 (2020).
Gan, X. T. et al. Chip-integrated ultrafast graphene photodetector with excessive responsivity. Nat. Photonics 7, 883–887 (2013).
Schall, D. et al. 50 GBit/s photodetectors based mostly on wafer-scale graphene for built-in silicon photonic communication techniques. ACS Photonics 1, 781–784 (2014).
Gao, Y. et al. Excessive-performance chemical vapor deposited graphene-on-silicon nitride waveguide photodetectors. Decide. Lett. 43, 1399–1402 (2018).
Schuler, S. et al. Managed era of a p–n junction in a waveguide built-in graphene photodetector. Nano Lett. 16, 7107–7112 (2016).
Schuler, S. et al. Graphene photodetector built-in on a photonic crystal defect waveguide. ACS Photonics 5, 4758–4763 (2018).
Muench, J. E. et al. Waveguide-integrated, plasmonic enhanced graphene photodetectors. Nano Lett. 19, 7632–7644 (2019).
Schuler, S. et al. Excessive-responsivity graphene photodetectors built-in on silicon microring resonators. Preprint at https://arxiv.org/abs/2007.03044 (2020).
Marconi, S. et al. Picture thermal impact graphene detector that includes 105 Gbit s−1 NRZ and 120 Gbit s−1 PAM4 direct detection. Nat. Commun. 12, 806 (2021).
Mišeikis, V. et al. Ultrafast, zero-bias, graphene photodetectors with polymeric gate dielectric on passive photonic waveguides. ACS Nano 14, 11190–11204 (2020).
Schall, D. et al. Graphene photodetectors with a bandwidth> 76 GHz fabricated in a 6” wafer course of line. J. Phys. D: Appl. Phys. 50, 124004 (2017).
Ma, P. et al. Plasmonically enhanced graphene photodetector that includes 100 Gbit/s information reception, excessive responsivity, and compact dimension. ACS Photonics 6, 154–161 (2019).
Urich, A., Unterrainer, Ok. & Mueller, T. Intrinsic response time of graphene photodetectors. Nano Lett. 11, 2804–2808 (2011).
Wang, Y. et al. Certain-states-in-continuum hybrid integration of 2D platinum diselenide on silicon nitride for high-speed photodetectors. ACS Photonics 7, 2643–2649 (2020).
Li, T. T. et al. Spatially managed electrostatic doping in graphene p–i–n junction for hybrid silicon photodiode. npj 2D Mater. Appl. 2, 36 (2018).
Gao, Y. et al. Excessive-speed van der Waals heterostructure tunneling photodiodes built-in on silicon nitride waveguides. Optica 6, 514–517 (2019).
Goossens, S. et al. Broadband picture sensor array based mostly on graphene–CMOS integration. Nat. Photonics 11, 366–371 (2017).
Mennel, L. et al. Ultrafast machine imaginative and prescient with 2D materials neural community picture sensors. Nature 579, 62–66 (2020).
Lien, M. B. et al. Ranging and lightweight area imaging with clear photodetectors. Nat. Photonics 14, 143–148 (2020).
Engel, M., Steiner, M. & Avouris, P. Black phosphorus photodetector for multispectral, high-resolution imaging. Nano Lett. 14, 6414–6417 (2014).
Cakmakyapan, S. et al. Gold-patched graphene nano-stripes for high-responsivity and ultrafast photodetection from the seen to infrared regime. Gentle.: Sci. Appl. 7, 20 (2018).
Amani, M. et al. Mid-wave infrared photoconductors based mostly on black phosphorus-arsenic alloys. ACS Nano 11, 11724–11731 (2017).
Lengthy, M. S. et al. Room temperature high-detectivity mid-infrared photodetectors based mostly on black arsenic phosphorus. Sci. Adv. 3, e1700589 (2017).
Shen, C. F. et al. Tellurene photodetector with excessive acquire and large bandwidth. ACS Nano 14, 303–310 (2020).
Chen, C. C. et al. Graphene-silicon schottky diodes. Nano Lett. 11, 5097 (2011).
Selvi, H. et al. Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors. Nanoscale 10, 18926–18935 (2018).
Chang, Ok. E. et al. Gate-controlled graphene-silicon schottky junction photodetector. Small 14, 1801182 (2018).
Wang, W. H. et al. Excessive-performance position-sensitive detector based mostly on graphene–silicon heterojunction. Optica 5, 27–31 (2018).
Casalino, M. et al. Vertically illuminated, resonant cavity enhanced, graphene–silicon schottky photodetectors. ACS Nano 11, 10955–10963 (2017).
Selvi, H. et al. In direction of substrate engineering of graphene–silicon Schottky diode photodetectors. Nanoscale 10, 3399–3409 (2018).
Casalino, M. et al. Free-space schottky graphene/silicon photodetectors working at 2 μm. ACS Photonics 5, 4577–4585 (2018).
Mao, J. et al. Ultrafast, broadband photodetector based mostly on MoSe2/silicon heterojunction with vertically standing layered construction utilizing graphene as clear electrode. Adv. Sci. 3, 1600018 (2016).
Jiang, W. et al. A flexible photodetector assisted by photovoltaic and bolometric results. Gentle.: Sci. Appl. 9, 160 (2020).
Mueller, T., Xia, F. N. & Avouris, R. Graphene photodetectors for high-speed optical communications. Nat. Photonics 4, 297–301 (2010).
Zhang, Y. Z. et al. Broadband excessive photoresponse from pure monolayer graphene photodetector. Nat. Commun. 4, 1811 (2013).
Xiong, X. et al. Excessive efficiency black phosphorus digital and photonic units with HfLaO dielectric. IEEE Electron System Lett. 39, 127–130 (2018).
Liu, Y. et al. Extremely responsive broadband black phosphorus photodetectors. Chin. Decide. Lett. 16, 020002 (2018).
Verguts, Ok. et al. Controlling water intercalation is essential to a direct graphene switch. ACS Appl. Mater. Interfaces 9, 37484–37492 (2017).
Wang, B. et al. Assist-free switch of ultrasmooth graphene movies facilitated by self-assembled monolayers for digital units and patterns. ACS Nano 10, 1404–1410 (2016).
Chen, M. G. et al. Advances in transferring chemical vapour deposition graphene: a evaluate. Mater. Horiz. 4, 1054–1063 (2017).
Moon, J. Y. et al. Layer-engineered large-area exfoliation of graphene. Sci. Adv. 6, eabc6601 (2020).
Schulman, D. S., Arnold, A. J. & Das, S. Contact engineering for 2D supplies and units. Chem. Soc. Rev. 47, 3037–3058 (2018).
Konstantatos, G. Present standing and technological prospect of photodetectors based mostly on two-dimensional supplies. Nat. Commun. 9, 5266 (2018).
Rogalski, A. Graphene-based supplies within the infrared and terahertz detector households: a tutorial. Adv. Decide. Photonics 11, 314–379 (2019).
Lin, H. T. et al. Mid-infrared built-in photonics on silicon: a perspective. Nanophotonics 7, 393–420 (2017).
Seeds, A. J. et al. Terahertz photonics for wi-fi communications. J. Lightwave Technol. 33, 579–587 (2015).
Yan, S. Q. et al. 2D supplies built-in with metallic nanostructures: fundamentals and optoelectronic functions. Nanophotonics 9, 1877–1900 (2020).
Liu, Y. et al. Van der Waals heterostructures and units. Nat. Rev. Mater. 1, 16042 (2016).
Yuan, X. et al. Wafer-scale arrayed p-n junctions based mostly on few-layer epitaxial GaTe. Nano Res. 8, 3332–3341 (2015).
Giambra, M. A. et al. Wafer-scale integration of graphene-based photonic units. ACS Nano 15, 3171–3187 (2021).
Liu, Y., Huang, Y. & Duan, X. F. Van der Waals integration earlier than and past two-dimensional supplies. Nature 567, 323–333 (2019).
Neumaier, D., Pindl, S. & Lemme, M. C. Integrating graphene into semiconductor fabrication strains. Nat. Mater. 18, 525–529 (2019).
Qu, Z. et al. Waveguide built-in graphene mid-infrared photodetector. In Proceedings of SPIE 10537, Silicon Photonics XIII. (SPIE, 2018). 105371N.
Chen, C. et al. Three-dimensional integration of black phosphorus photodetector with silicon photonics and nanoplasmonics. Nano Lett. 17, 985–991 (2017).
Yuan, S. F. et al. Room temperature graphene mid-infrared bolometer with a broad operational wavelength vary. ACS Photonics 5, 1206–1215 (2020).
Xu, M. et al. Black phosphorus mid-infrared photodetectors. Appl. Phys. B 123, 130 (2017).
Yuan, S. F. et al. Air-stable room-temperature mid-infrared photodetectors based mostly on hBN/black arsenic phosphorus/hBN heterostructures. Nano Lett. 18, 3172–3179 (2018).
Xiang, D. et al. Anomalous broadband spectrum photodetection in 2D rhenium disulfide transistor. Adv. Optical Mater. 7, 1901115 (2019).
Liu, C. H. et al. Graphene photodetectors with ultra-broadband and excessive responsivity at room temperature. Nat. Nanotechnol. 9, 273–278 (2014).
Kim, W. et al. Photoresponse of graphene-gated graphene-GaSe heterojunction units. ACS Appl. Nano Mater. 1, 3895–3902 (2018).
Liu, X. Z. et al. Infrared photodetector based mostly on the photothermionic impact of graphene-nanowall/silicon heterojunction. ACS Appl. Mater. Interfaces 11, 17663–17669 (2019).